This innovation is particularly crucial for high-end AI servers, where voltage must be decreased from 230 V to below 1.8 V, significantly improving power conversion efficiency.

Infineon has unveiled a groundbreaking ultra-thin silicon wafer technology designed to enhance energy efficiency and power density in various applications, including AI data centers and consumer electronics.

These wafers, measuring just 20 micrometers thick—about the width of a human hair—represent the thinnest power semiconductor wafers ever manufactured.

Despite the challenges of handling such delicate wafers to prevent bowing and separation during assembly, Infineon has successfully managed these production hurdles.

The company boasts a robust patent portfolio for this innovation, reinforcing its position in advanced semiconductor manufacturing.

By reducing the thickness from the standard 40-60 micrometers, Infineon has halved substrate resistance, resulting in over a 15% reduction in power loss.

The new wafer technology integrates seamlessly into existing silicon production lines, ensuring high yield and supply security.

Jochen Hanebeck, CEO of Infineon, emphasized the company's commitment to advancing power semiconductor technology and addressing global trends in decarbonization and digitalization.

Adam White, Division President at Infineon, highlighted the growing energy demands of AI data centers, projecting their AI business to reach one billion euros within two years.

Infineon anticipates that this energy-efficient wafer design will replace existing low-voltage power converter wafers within the next three to four years.

The ultra-thin silicon wafers will be showcased at the upcoming Electronica trade show in Munich from November 12 to 15, 2024.

This new wafer technology has already been qualified for use in Infineon's Integrated Smart Power Stages, with initial customer deliveries underway.